X-Ray Diffraction Wafer Mapping Method from NASA Means More Reliable Electronics
The technology is an innovative X-ray diffraction (XRD) method that is beneficial for wafer-level mass production of silicon (Si), germanium (Ge), or SiGe semiconductors on trigonal crystal substrates. Developed to benefit NASA’s rhombohedral lattice-matched SiGe semiconductor materials technology, this unprecedented characterization technology can examine a whole wafer with micrometer-to-millimeter resolution and with part-per-million sensitivity.
This XRD method can also be used to determine optimal conditions and the best growth parameters by using iterative improvements that can be integrated during epitaxial growth with an in-situ X-ray diffraction machine.
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